Abstract: In this paper, we investigate the bandgap energy, lattice constants, optical confinement factor, and physical properties of InGaN based quantum well lasers for 1.55 µm applications. Linear interpolation between the experimentally determined values of InN and GaN is used to calculate the lattice constants and the composition of the composite InGaN for the desired bandgap energy. Solving the Schrödinger equation in conjunction with k.p method and Luttinger-Kohn Hamiltonian matrix operator, the band profiles are calculated for the quantum well structure. First, the probability distribution is calculated, later which describes the electron density in the quantum well, and a value of 10-18 cm-3 is found from the calculations. In addition, the energies of conduction and valence bands are clearly demonstrated, and the corresponding heavy and light holes states are examined clearly. Determination of these parameters is of immense important for the microstructural fabrication, laser pumping power requirements, and practical applicability of the proposed laser structure.